What Can ABACUS Do Too? | Explain the Formation Mechanism of Conductive Filaments in RRAM Based on TiOx/MoS2–xOx Structure Induced by S Vacancies
Recently, the experimental team led by Yuanyuan Shi from the University of Science and Technology of China collaborated with the theoretical team from the Hefei Comprehensive National Science Center Institute of Artificial Intelligence. They controlled the formation of conductive filaments by using a single layer of MoS₂ as an interlayer in the TiOₓ resistive switching layer of analog resistive random access memory (analog RRAM). This improved the device's switching uniformity, linearity, and symmetry. The voltage difference between switching cycles was only 1.28% and 1.7%. This structure also achieved high conductance modulation linearity and 64 conductance states (6-bit), and the on-chip training accuracy was as high as 93.02%. The researchers used the domestic open-source density functional theory software ABACUS (Atomic Abacus) to calculate the diffusion, migration, and defect structures of Ti ions on the MoS₂ surface and successfully explained the formation mechanism of conductive filaments in RRAM based on the TiOₓ/MoS₂–xOₓ structure induced by S vacancies. This work effectively improved the uniformity, linearity, and symmetry of analog RRAM devices and provided an impetus for the development of RRAM-based in-memory computing chips. The research results "Uniformity, Linearity, and Symmetry Enhancement in TiOₓ/MoS₂–xOₓ Based Analog RRAM via S-Vacancy Confined Nanofilament" have been published in the Nano Letters journal (Nano Lett. 24, 51, 16283–16292 (2024)).
Paper link: https://pubs.acs.org/doi/10.1021/acs.nanolett.4c04434